The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Aug. 08, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Jae Gil Lee, Seoul, KR;

Ju Ry Song, Suwon-si, KR;

Hyangkeun Yoo, Seongnam-si, KR;

Se Ho Lee, Yongin-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11597 (2017.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); H01L 29/40111 (2019.08); H01L 29/41741 (2013.01); H01L 29/42372 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/78391 (2014.09);
Abstract

A vertical memory device according to an aspect includes a substrate, a first gate electrode structure disposed on the substrate and a second gate electrode structure spaced apart from the first gate electrode structure in a first direction substantially perpendicular to the substrate, a channel contact electrode layer disposed between the first gate electrode structure and the second gate electrode structure, and a channel layer extending along the first direction and in contact with the channel contact electrode layers and the first and the second gate electrode structures.


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