The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Nov. 02, 2018
Micron Technology, Inc., Boise, ID (US);
Changhan Kim, Boise, ID (US);
Richard J. Hill, Boise, ID (US);
John D. Hopkins, Meridian, ID (US);
Collin Howder, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory array comprises a vertical stack comprising alternating insulative tiers and wordline tiers. The wordline tiers comprise gate regions of individual memory cells. The gate regions individually comprise part of a wordline in individual of the wordline tiers. Channel material extends elevationally through the insulative tiers and the wordline tiers. The individual memory cells comprise a memory structure laterally between the gate region and the channel material. Individual of the wordlines comprise opposing laterally-outer longitudinal edges. The longitudinal edges individually comprise a longitudinally-elongated recess extending laterally into the respective individual wordline. Methods are disclosed.