The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Jan. 24, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Francois H. Fabreguette, Boise, ID (US);
John A. Smythe, Boise, ID (US);
Witold Kula, Gilroy, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/3215 (2006.01); H01L 21/385 (2006.01); H01L 21/324 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2257 (2013.01); H01L 21/0228 (2013.01); H01L 21/306 (2013.01); H01L 21/02694 (2013.01); H01L 21/2251 (2013.01); H01L 21/2254 (2013.01); H01L 21/3115 (2013.01); H01L 21/324 (2013.01); H01L 21/3215 (2013.01); H01L 21/385 (2013.01);
Abstract
A method of doping a silicon-containing material. The method comprises forming at least one opening in a silicon-containing material and conformally forming a doped germanium material in the at least one opening and adjacent to the silicon-containing material. A dopant of the doped germanium material is transferred into the silicon-containing material. Methods of forming a semiconductor device are also disclosed, as are semiconductor devices comprising a doped silicon-containing material.