The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Sep. 03, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Wenhui Wang, San Jose, CA (US);
Huixiong Dai, San Jose, CA (US);
Christopher S. Ngai, Burlingame, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 23/5226 (2013.01); H01L 29/66545 (2013.01);
Abstract
Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of overlapping masks in a three-color process.