The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Jun. 12, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jian-Lun Lo, Taichung, TW;
Jih-Churng Twu, Hsinchu County, TW;
Feng-Yu Chen, Taichung, TW;
Yuan-Hsiao Su, Taitung, TW;
Yi-Chi Huang, Taichung, TW;
Yueh-Ting Yang, Taichung, TW;
Shu-Han Chao, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.