The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Feb. 14, 2017
Toshiba Mitsubishi-electric Industrial Systems Corporation, Chuo-ku, JP;
Tohoku University, Sendai, JP;
Shinichi Nishimura, Tokyo, JP;
Kensuke Watanabe, Tokyo, JP;
Yoshihito Yamada, Tokyo, JP;
Akinobu Teramoto, Miyagi, JP;
Tomoyuki Suwa, Miyagi, JP;
Yoshinobu Shiba, Miyagi, JP;
Toshiba Mitsubishi-Electric Industrial Systems Corporation, Chuo-ku, JP;
Tohoku University, Sendai, JP;
Abstract
A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.