The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Sep. 30, 2019
Applicant:
Unisantis Electronics Singapore Pte. Ltd., Peninsula Plaza, SG;
Inventors:
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Assignee:
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0273 (2013.01); H01L 21/31055 (2013.01); H01L 21/32055 (2013.01); H01L 21/32115 (2013.01); H01L 21/32133 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 23/528 (2013.01); H01L 27/088 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01);
Abstract
A method for producing an SGT employs a gate-last process that includes forming a fin-shaped semiconductor layer, a pillar-shaped semiconductor layer, a gate electrode, and a gate line by self-alignment. The gate line and the pillar-shaped semiconductor layer are formed in a direction perpendicular to a direction in which the fin-shaped semiconductor layer extends.