The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Nov. 26, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Gerben Doornbos, Kessel-Lo, BE;
Peter Ramvall, Lund, SE;
Matthias Passlack, Huldenberg, BE;
Carlos H. Diaz, Los Altos Hills, CA (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor structure including forming a first type semiconductor layer. The method also includes forming a semiconductor interlayer over the first type semiconductor layer. The method further includes forming a second type semiconductor layer over the semiconductor interlayer. The method further includes etching the first type semiconductor layer, the semiconductor interlayer, and the second type semiconductor layer to form a fin structure. The method further includes oxidizing the semiconductor interlayer.