The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Feb. 17, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Muneyuki Imai, Yamanashi, JP;
Akitaka Shimizu, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3212 (2013.01); H01L 21/67017 (2013.01); H01L 21/67167 (2013.01); H01L 21/68742 (2013.01); H01L 21/76224 (2013.01);
Abstract
In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.