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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10923355 B1

PDFFull Text
Date of Patent:
Feb. 16, 2021

Filed:

Dec. 24, 2019

Methods and systems for dopant activation using microwave radiation

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Chun-Hsiung Tsai, Hsinchu County, TW;

Huai-Tei Yang, Hsinchu, TW;

Kuo-Feng Yu, Hsinchu, TW;

Kei-Wei Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Cory W Eskridge

Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H05B 6/80 (2006.01); H01L 29/78 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2686 (2013.01); H01L 21/02532 (2013.01); H01L 21/02584 (2013.01); H01L 21/02694 (2013.01); H01L 21/2252 (2013.01); H01L 21/2254 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 21/76895 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/32 (2013.01); H01L 29/45 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H05B 6/80 (2013.01);
Abstract

A semiconductor structure includes a substrate, a source/drain (S/D) junction, and an S/D contact. The S/D junction is associated with the substrate and includes a trench-defining wall, a semiconductor layer, and a semiconductor material. The trench-defining wall defines a trench. The semiconductor layer is formed over the trench-defining wall, partially fills the trench, substantially covers the trench-defining wall, and includes germanium. The semiconductor material is formed over the semiconductor layer and includes germanium, a percentage composition of which is greater than a percentage composition of the germanium of the semiconductor layer. The S/D contact is formed over the S/D junction.

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