The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jun. 20, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32495 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/6831 (2013.01); H01J 37/32834 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01); H01L 21/3065 (2013.01);
Abstract
A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.