The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Feb. 21, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Steven Bentley, Albany, NY (US);
Cheng Chi, Jersey City, NJ (US);
Chanro Park, Saratoga, NY (US);
Ruilong Xie, Schenectady, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0228 (2013.01); H01L 21/823468 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01);
Abstract
Vertical field effect transistor (VFET) structures and methods of fabrication include a bottom spacer having a uniform thickness. The bottom spacer includes a bilayer portion including a first layer formed of an oxide, for example, and a second layer formed of a nitride, for example, on the first layer, and a monolayer portion of a fourth layer of a nitride for example, immediately adjacent to and intermediate the fin and the bilayer portion.