The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Nov. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jui-Yao Lai, Changhwa, TW;
Ying-Yan Chen, Hsinchu, TW;
Yen-Ming Chen, Chu-Pei, TW;
Sai-Hooi Yeong, Zhubei, TW;
Yung-Sung Yen, New Taipei, TW;
Ru-Gun Liu, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first gate structure, a second gate structure, a first source/drain structure and a second source/drain structure. The first gate structure includes a first gate electrode and a first cap insulating layer disposed on the first gate electrode. The second gate structure includes a second gate electrode and a first conductive contact layer disposed on the first gate electrode. The first source/drain structure includes a first source/drain conductive layer and a second cap insulating layer disposed over the first source/drain conductive layer. The second source/drain structure includes a second source/drain conductive layer and a second conductive contact layer disposed over the second source/drain conductive layer.