The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Jun. 18, 2018
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Alexei Marakhtanov, Albany, CA (US);
Felix Leib Kozakevich, Sunnyvale, CA (US);
John Holland, San Jose, CA (US);
Bing Ji, Pleasanton, CA (US);
Kenneth Lucchesi, Newark, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 37/32183 (2013.01); H01L 21/67069 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/327 (2013.01); H01J 2237/3344 (2013.01);
Abstract
Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.