The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Oct. 05, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); G03F 7/20 (2006.01); H01L 21/04 (2006.01); H01J 37/317 (2006.01); H01L 29/861 (2006.01); H01L 21/027 (2006.01); H01L 23/544 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70008 (2013.01); G03F 7/70775 (2013.01); H01J 37/3171 (2013.01); H01L 21/0273 (2013.01); H01L 21/0465 (2013.01); H01L 23/544 (2013.01); H01L 29/0615 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/8611 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01);
Abstract
A semiconductor device is provided that includes a silicon carbide substrate including a main surface at which a plurality of doped zones are formed in a junction termination extension zone of the silicon carbide substrate, the plurality of doped zones are arranged such that a lateral dopant concentration gradient is formed that decreases from a central region of the silicon carbide substrate to an outer edge region of the silicon carbide substrate.