The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
May. 02, 2019
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
Randolph R. Kay, Albuquerque, NM (US);
Seethambal S. Mani, Albuquerque, NM (US);
Andrew Pomerene, Albuquerque, NM (US);
Andrew Lea Starbuck, Albuquerque, NM (US);
Reinhard Brock, Albuquerque, NM (US);
Douglas Chandler Trotter, Albuquerque, NM (US);
Adam Jones, Albuquerque, NM (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Abstract
A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.