The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Apr. 03, 2018
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Wei-Lun Hsu, Taichung, TW;

Hung-Lin Shih, Hsinchu, TW;

Che-Hung Huang, Hsinchu, TW;

Ping-Cheng Hsu, Taipei, TW;

Hsu-Yang Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10888 (2013.01); H01L 21/76224 (2013.01); H01L 21/76877 (2013.01); H01L 27/10876 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H01L 27/10885 (2013.01);
Abstract

According to an embodiment of the present invention, a method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; and forming a bit line structure in the trench.


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