The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

May. 08, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Eric H. Freeman, Kuna, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 49/02 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/7687 (2013.01); H01L 21/76852 (2013.01); H01L 21/76877 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 28/91 (2013.01); H01L 27/11573 (2013.01);
Abstract

A semiconductor device includes a capacitor structure. The capacitor structure comprises conductive vias extending through openings in a stack of alternating dielectric materials and first conductive materials, each conductive via comprising a second conductive material extending through the openings and another dielectric material on sidewalls of the openings, first conductive lines in electrical communication with a first group of the conductive vias, and second conductive lines in electrical communication with a second group of the conductive vias. Related semiconductor device, electronic systems, and methods are disclosed.


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