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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10910241 B1

PDFFull Text
Date of Patent:
Feb. 02, 2021

Filed:

Dec. 04, 2018

Wafer producing apparatus and carrying tray

Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Kentaro Iizuka, Tokyo, JP;

Naoki Omiya, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:

Greer Burns & Crain, Ltd.

Primary Examiner:

Erica E Cadugan

Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/38 (2014.01); B23K 26/08 (2014.01); H01L 21/673 (2006.01); H01L 21/677 (2006.01); H01L 21/304 (2006.01); B28D 5/00 (2006.01); B24B 7/22 (2006.01); H01L 21/67 (2006.01); B23K 26/00 (2014.01); B24B 27/00 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67207 (2013.01); B23K 26/0093 (2013.01); B23K 26/0838 (2013.01); B23K 26/38 (2013.01); B23K 26/53 (2015.10); B24B 7/228 (2013.01); B24B 27/0069 (2013.01); B28D 5/00 (2013.01); H01L 21/304 (2013.01); H01L 21/6773 (2013.01); H01L 21/67092 (2013.01); H01L 21/67173 (2013.01); H01L 21/67219 (2013.01); H01L 21/67346 (2013.01); H01L 21/67706 (2013.01); H01L 21/67766 (2013.01); H01L 21/67769 (2013.01); B23K 2103/56 (2018.08); Y10T 29/5139 (2015.01); Y10T 29/5143 (2015.01); Y10T 29/5196 (2015.01);
Abstract

A wafer producing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to apply a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be produced from an upper surface of the ingot held by a second holding table, to form a peel-off layer; a wafer peeling unit configured to hold the upper surface of the ingot held by a third holding table and peel off the wafer from the peel-off layer; and a carrying tray having an ingot support section configured to support the ingot and a wafer support section configured to support the wafer.

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