The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
May. 16, 2019
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Budong You, Hangzhou, CN;
Hui Yu, Hangzhou, CN;
Meng Wang, Hangzhou, CN;
Yicheng Du, Hangzhou, CN;
Chuan Peng, Hangzhou, CN;
Xianguo Huang, Hangzhou, CN;
Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou, CN;
Abstract
A laterally diffused metal oxide semiconductor structure can include: a base layer; a source region and a drain region located in the base layer; first dielectric layer located on a top surface of the base layer and adjacent to the source region; a voltage withstanding layer located on the top surface of the base layer and located between the first dielectric layer and the drain region; a first conductor at least partially located on the first dielectric layer; and a second conductor at least partially located on the voltage withstanding layer, where the first and second conductors are spatially isolated, and a juncture region of the first dielectric layer and the voltage withstanding layer is covered by one of the first and second conductors.