The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Jan. 10, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

Darsen D. Lu, Taichung, TW;

Ghavam G. Shahidi, Pound Ridge, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 21/8238 (2006.01); H01L 29/94 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/845 (2013.01); H01L 23/528 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 28/60 (2013.01); H01L 29/0847 (2013.01); H01L 29/6681 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/94 (2013.01); H01L 23/485 (2013.01); H01L 23/5223 (2013.01); H01L 23/5286 (2013.01);
Abstract

An electrical device including a plurality of fin structures. The plurality of fin structures including at least one decoupling fin and at least one semiconductor fin. The electrical device includes at least one semiconductor device including a channel region present in the at least one semiconductor fin, a gate structure present on the channel region of the at least one semiconductor fin, and source and drain regions present on source and drain region portion of the at least one semiconductor fin. The electrical device includes at least one decoupling capacitor including the decoupling fin structure as a first electrode of the decoupling capacitor, a node dielectric layer and a second electrode provided by the metal contact to the source and drain regions of the semiconductor fin structures. The decoupling capacitor is present underlying the power line to the semiconductor fin structures.


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