The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Dec. 29, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tomohisa Hoshino, Nirasaki, JP;

Keiichi Fujita, Nirasaki, JP;

Masato Hamada, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 18/16 (2006.01); C23C 18/18 (2006.01); C23C 18/40 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); C25D 7/12 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/288 (2013.01); C23C 18/1619 (2013.01); C23C 18/1633 (2013.01); C23C 18/1675 (2013.01); C23C 18/1879 (2013.01); C25D 7/123 (2013.01); H01L 21/32051 (2013.01); H01L 21/76873 (2013.01); H01L 21/76874 (2013.01); H01L 21/76898 (2013.01); C23C 18/1653 (2013.01); C23C 18/1696 (2013.01); C23C 18/40 (2013.01);
Abstract

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.


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