The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Feb. 21, 2020
Infineon Technologies Ag, Neubiberg, DE;
Thomas Aichinger, Faak am See, AT;
Wolfgang Bergner, Klagenfurt, AT;
Paul Ellinghaus, Unterhaching, DE;
Rudolf Elpelt, Erlangen, DE;
Romain Esteve, Munich, DE;
Florian Grasse, Hohenthurn, AT;
Caspar Leendertz, Munich, DE;
Shiqin Niu, Freising, DE;
Dethard Peters, Hoechstadt, DE;
Ralf Siemieniec, Villach, AT;
Bernd Zippelius, Erlangen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.