The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Oct. 11, 2019
Asml Netherlands B.v., Veldhoven, NL;
Miguel Garcia Granda, Veldhoven, NL;
Elliott Gerard Mc Namara, Eindhoven, NL;
Pierre-Yves Jerome Yvan Guittet, Veldhoven, NL;
Eric Jos Anton Brouwer, Weert, NL;
Bart Peter Bert Segers, Tessenderlo, BE;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w, w) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.