The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Jun. 04, 2018
Intel Corporation, Santa Clara, CA (US);
Stephen Russell, Boise, ID (US);
Andrea Gotti, Vaprio d'Adda, IT;
Andrea Redaelli, Casatenovo, IT;
Enrico Varesi, Milan, IT;
Innocenzo Tortorelli, Cernusco sul Naviglio, IT;
Lorenzo Fratin, Vimercate, IT;
Alessandro Sebastiani, Vimercate, IT;
Intel Corporation, Santa Clara, CA (US);
Abstract
A phase change memory (PCM) cell can include a PCM layer. A first electrode and a second electrode disposed on opposite sides of the PCM layer. The first electrode, the second electrode, or both includes a metal ceramic composite material layer disposed between an upper barrier layer and a lower barrier layer and wherein the metal ceramic composite material layer provides a corresponding electrode with an electrical resistivity of from 10 mOhm-cm to 1000 mOhm-cm.