The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Sep. 14, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Chirantha P. Rodrigo, Santa Clara, CA (US);
Suketu A. Parikh, San Jose, CA (US);
Tsz Keung Cheung, San Jose, CA (US);
Satya Gowthami Achanta, Fremont, CA (US);
Jingchun Zhang, Cupertino, CA (US);
Saravjeet Singh, Sunnyvale, CA (US);
Tae Won Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.