The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jul. 26, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Shishi Jiang, Santa Clara, CA (US);
Pramit Manna, Sunnyvale, CA (US);
Bo Qi, San Jose, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Rui Cheng, Santa Clara, CA (US);
Tomohiko Kitajima, San Jose, CA (US);
Harry S. Whitesell, Sunnyvale, CA (US);
Huiyuan Wang, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 27/11551 (2017.01); H01L 27/11578 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0228 (2013.01); H01L 21/02063 (2013.01); H01L 21/02112 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01);
Abstract
Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.