The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Jul. 17, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsaing-Pin Kuan, Hsinchu, TW;
Ching-Hua Hsieh, Hsinchu, TW;
Chih-Wei Lin, Hsinchu County, TW;
Chun-Cheng Lin, New Taipei, TW;
Yu-Wei Lin, New Taipei, TW;
Chun-Yen Lan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a first semiconductor die, an insulating encapsulation laterally encapsulating the first semiconductor die, an electromagnetic shielding structure enclosing the first semiconductor die and a first portion of the insulating encapsulation, and a redistribution structure. The electromagnetic shielding structure includes a first conductive layer and a dielectric frame laterally covering the first conductive layer. The first conductive layer surrounds the first portion of the insulating encapsulation and extends to cover a first side of the first semiconductor die. The dielectric frame includes a first surface substantially leveled with the first conductive layer. The redistribution structure is disposed on a second side of the first semiconductor die opposing to the first side, and the redistribution structure is electrically coupled to the first semiconductor die and the first conductive layer of the electromagnetic shielding structure.