The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Jul. 12, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Yutaka Fujino, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/511 (2006.01); H01J 37/32 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C23C 16/34 (2006.01); C23C 16/46 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0335 (2013.01); C23C 16/345 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01); C23C 16/511 (2013.01); H01J 37/3222 (2013.01); H01J 37/32724 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01J 2237/3321 (2013.01);
Abstract
A hard mask film forming method includes preparing a substrate in which an etching target film is formed on a base. The hard mask film forming method further includes forming a hard mask film on the substrate while controlling film forming parameters such that tensile stress is set as initial film stress and the tensile stress monotonously increases from a bottom surface of the hard mask film toward an upper surface of the hard mask film.