The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Nov. 02, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Sungchieh Lin, Zhubei, TW;

Kuoyuan (Peter) Hsu, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/22 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 7/1078 (2013.01); G11C 7/22 (2013.01);
Abstract

Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storage systems selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storage systems selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption. Moreover, the configurable memory storage systems selectively provide the maximum operational voltage signal to bulk (B) terminals of some of their transistors to prevent latch-up of these transistors. In some situations, the configurable memory storage systems can dynamically adjust the maximum operational voltage signal to compensate for fluctuations in the maximum operational voltage signal.


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