The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Apr. 25, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wen-Che Tsai, Hsinchu, TW;
Min-Yann Hsieh, Kaohsiung, TW;
Hua-Feng Chen, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, an inter-layer dielectric layer, a contact plug, and a contact hole liner. The substrate has a source/drain region. The inter-layer dielectric layer is over the substrate and has a contact hole therein. The contact plug is electrically connected to the source/drain region through the contact hole of the inter-layer dielectric layer. The contact hole liner extends between the contact plug and a sidewall of a first portion of the contact hole. The contact hole liner terminates prior to reaching a second portion of the contact hole. The first portion is between the second portion and the source/drain region.