The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
May. 15, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Eric H. Freeman, Kuna, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01); G11C 16/10 (2006.01); H01L 27/108 (2006.01); G11C 16/24 (2006.01); H01L 27/11526 (2017.01); H01L 27/11529 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 28/88 (2013.01); G11C 16/102 (2013.01); G11C 16/24 (2013.01); H01L 27/1085 (2013.01); H01L 27/11526 (2013.01); H01L 27/11529 (2013.01); H01L 27/11573 (2013.01); H01L 28/82 (2013.01); H01L 27/10808 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01);
Abstract
Semiconductor structures including a plurality of conductive structures having a dielectric material therebetween are disclosed. The thickness of the dielectric material spacing apart the conductive structures may be adjusted to provide optimization of capacitance and voltage threshold. The semiconductor structures may be used as capacitors, for example, in memory devices. Various methods may be used to form such semiconductor structures and capacitors including such semiconductor structures. Memory devices including such capacitors are also disclosed.