The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Mar. 26, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeonggi Jin, Seoul, KR;

Ju-Il Choi, Seongnam-si, KR;

Teahwa Jeong, Hwaseong-si, KR;

Atsushi Fujisaki, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/76871 (2013.01); H01L 24/08 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02331 (2013.01);
Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. The method includes providing a semiconductor substrate, forming a redistribution line on a top surface of the semiconductor substrate, and forming a passivation layer to cover the redistribution line on the top surface of the semiconductor substrate. The forming a redistribution line includes a first stage of forming a first segment of the redistribution line on the top surface of the semiconductor substrate, and a second stage of forming a second segment of the redistribution line on the first segment of the redistribution line. An average grain size of the second segment of the redistribution line is less than an average grain size of the first segment of the redistribution line.


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