The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Sep. 18, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kensaku Narushima, Yamanashi, JP;

Takanobu Hotta, Yamanashi, JP;

Atsushi Matsumoto, Yamanashi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/28568 (2013.01); H01L 21/67069 (2013.01); H01L 21/76879 (2013.01);
Abstract

There is provided a film forming method including: an etching step of etching a portion of a base film to reduce a film thickness of the base film by intermittently supplying a tungsten chloride gas into a processing container while performing a purging step in the course of the intermittent supply of the tungsten chloride gas, wherein the processing container accommodates a substrate, and the base film is formed on a surface of the substrate; and a film forming step of forming a tungsten film on the base film by alternately supplying the tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas into the processing container while performing the purging step in the course of the alternate supply of the tungsten chloride gas and the reducing gas, wherein the film forming step occurs after the etching step.


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