The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Sep. 23, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Lars W. Liebmann, Mechanicville, NY (US);

Balasubramanian Pranatharthi Haran, Watervliet, NY (US);

Veeraraghavan Basker, Schenectady, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76819 (2013.01); H01L 21/321 (2013.01); H01L 21/76877 (2013.01); H01L 29/42376 (2013.01);
Abstract

One illustrative transistor device disclosed herein includes a gate structure positioned above at least an active region, wherein the gate structure has an axial length in a direction corresponding to a gate width direction of the transistor device. In this example, a first portion of the axial length of the gate structure has a first upper surface and a second portion of the axial length of the gate structure has a second upper surface, wherein the first upper surface is positioned at a level that is above a level of the second upper surface. The device also includes a gate contact structure that contacts the first upper surface of the gate structure.


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