The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
May. 03, 2019
Applied Materials, Inc., Santa Clara, CA (US);
David Chu, Campbell, CA (US);
Steven C. Hung, Sunnyvale, CA (US);
Malcolm J. Bevan, Santa Clara, CA (US);
Charles Chu, Santa Clara, CA (US);
Tatsuya E. Sato, San Jose, CA (US);
Shih-Chung Chen, Cupertino, CA (US);
Patricia M. Liu, Saratoga, CA (US);
Johanes Swenberg, Los Gatos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.