The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Jul. 09, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Harmeet Singh, Fremont, CA (US);

Keith Gaff, Fremont, CA (US);

Brett Richardson, San Ramon, CA (US);

Sung Lee, Pleasanton, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32669 (2013.01); H01J 37/32715 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01F 7/20 (2013.01);
Abstract

An electrostatic chuck includes an embedded electrode receiving a first voltage to electrostatically attract a semiconductor substrate to the electrostatic chuck. A plurality of current loops are disposed in at least one of the electrostatic chuck and an edge ring surrounding the electrostatic chuck. The current loops are laterally spaced apart. Each current loop is a wire formed into a loop. One or more DC power sources are electrically connected to the current loops. A controller supplies the first voltage to the embedded electrode, supplies a DC current to the current loops from the power sources, and controls the power sources. Each current loop is independently operable and generates a localized DC magnetic field proximate to the semiconductor substrate on receiving the DC current during plasma processing of the semiconductor substrate to adjust the plasma processing of the semiconductor substrate. The localized DC magnetic field does not generate plasma.


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