The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Nov. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Ho Chiang, Hsinchu, TW;
Cheng-Han Wu, Hsinchu, TW;
Jyh-Huei Chen, Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a gate structure formed over the fin structure. The FinFET device structure also includes a contact formed over the fin structure and adjacent to the gate structure. The FinFET device structure further includes a first hard mask layer formed over the gate structure, and an upper portion of the first hard mask layer has an inverted-T shape. In addition, the FinFET device structure includes a second hard mask layer formed over the contact, and the second hard mask layer has a T shape.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile