The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 23, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/8252 (2006.01); H01L 29/417 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 21/0254 (2013.01); H01L 21/02609 (2013.01); H01L 21/8252 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42392 (2013.01); H01L 29/66522 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/41725 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01);
Abstract
A method includes forming a first epitaxial layer having a first dopant over a substrate; etching the first epitaxial layer to form a fin with a polar sidewall; and forming in sequence a semiconductor interlayer and a second epitaxial layer to surround the fin, in which the second epitaxial layer has a second dopant with a different conductivity type than the first dopant.