The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Oct. 28, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/45 (2013.01); H01L 29/4966 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01); H01L 21/28518 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 23/485 (2013.01);
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a metal gate electrode structure and an insulating layer over the semiconductor substrate. The insulating layer surrounds the metal gate electrode structure. The method includes nitrifying a first top portion of the metal gate electrode structure to form a metal nitride layer over the metal gate electrode structure.