The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
May. 13, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Wei-Li Huang, Pingtung, TW;
Chi-Cheng Chen, Tainan, TW;
Hon-Lin Huang, Hsinchu, TW;
Chien-Chih Chou, New Taipei, TW;
Chin-Yu Ku, Hsinchu, TW;
Chen-Shien Chen, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/3213 (2006.01); H01F 41/04 (2006.01); H01F 27/28 (2006.01); H01L 27/22 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01F 27/2804 (2013.01); H01F 41/041 (2013.01); H01L 21/32134 (2013.01); H01L 21/32138 (2013.01); H01L 21/32139 (2013.01); H01L 23/5227 (2013.01); H01L 23/645 (2013.01); H01L 27/222 (2013.01); H01L 2924/1206 (2013.01);
Abstract
A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.