The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 13, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Cheng-Hsien Chou, Tainan, TW;
Wen-I Hsu, Tainan, TW;
Tsun-Kai Tsao, Tainan, TW;
Chih-Yu Lai, Tainan, TW;
Jiech-Fun Lu, Madou Township, TW;
Yeur-Luen Tu, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method is performed by forming a gate dielectric layer over a substrate having a first photodetector region and forming a gate material over the gate dielectric layer. A dielectric protection layer is deposited over the gate dielectric layer and a first sidewall spacer is formed along a side of the gate material. The dielectric protection layer extends from a first location directly over the first photodetector region to a second location between the first sidewall spacer and the gate dielectric layer.