The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jan. 10, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Guan-Yao Tu, Hsinchu, TW;
Yu-Yun Peng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate and forming a sealing layer over a sidewall of the gate stack using an atomic layer deposition process in a process chamber. The atomic layer deposition process includes alternately and sequentially introducing a first precursor gas and a second precursor gas over the sidewall of the gate stack to form the sealing layer. The second precursor gas has a different atomic concentration of carbon than that of the first precursor gas. The atomic layer deposition process also includes removing a reaction byproduct from the process chamber after the first precursor gas is introduced and before the second precursor gas is introduced. The method also includes partially removing the sealing layer to form a sealing element over the sidewall of the gate stack.