The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jun. 14, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Wan-Yu Lee, Taipei, TW;
Ying-Hao Kuo, Hsinchu, TW;
Hai-Ching Chen, Hsinchu, TW;
Tien-l Bao, Taoyuan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); C09K 13/02 (2006.01); G02B 6/136 (2006.01); G02B 6/42 (2006.01); H01L 21/306 (2006.01); G02B 6/122 (2006.01); H01L 21/308 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); C09K 13/02 (2013.01); G02B 6/1221 (2013.01); G02B 6/42 (2013.01); H01L 21/3085 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); G02B 2006/12104 (2013.01);
Abstract
A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.