The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Oct. 22, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Jui Hsieh Lai, Taoyuan, TW;
Ying-Hao Kuo, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/124 (2006.01); G02B 6/12 (2006.01); G02B 6/132 (2006.01);
U.S. Cl.
CPC ...
G02B 6/124 (2013.01); G02B 6/132 (2013.01); G02B 2006/1215 (2013.01); G02B 2006/12104 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12176 (2013.01);
Abstract
A method of making a grating in a waveguide includes forming a waveguide material over a substrate, the waveguide material having a thickness less than or equal to about 100 nanometers (nm). The method further includes forming a photoresist over the waveguide material and patterning the photoresist. The method further includes forming a first set of openings in the waveguide material through the patterned substrate and filling the first set of openings with a metal material.