The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Aug. 29, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen Hsiung Yang, Hsinchu County, TW;

Chun-Wen Cheng, Hsinchu County, TW;

Chia-Hua Chu, Hsinchu County, TW;

En-Chan Chen, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01); H04R 19/04 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0051 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0307 (2013.01); B81B 2203/0361 (2013.01); H04R 19/04 (2013.01); H04R 31/00 (2013.01); H04R 2201/003 (2013.01);
Abstract

A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.


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