The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Oct. 09, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun-Ming Chang, Kaohsiung, TW;
Chun-Liang Hou, Hsinchu County, TW;
Wen-Jung Liao, Hsinchu, TW;
Ming-Chang Lu, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor epitaxial structure with reduced defects, including a substrate with a recess formed thereon, an island insulator on a bottom surface of the recess, spacers on sidewalls of the recess, a buffer layer in the recess and covering the island insulator, a channel layer in the recess and on the buffer layer, and a barrier layer in the recess and on the channel layer, wherein two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) is formed in the channel layer.