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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10861800 B1

PDFFull Text
Date of Patent:
Dec. 08, 2020

Filed:

May. 30, 2019

Integrated circuit structure having a crown-shaped semiconductor strip and an isolation region recessed in the substrate

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wan-Chun Kuan, Chiayi, TW;

Chih-Teng Liao, Hsinchu, TW;

Yi-Wei Chiu, Kaohsiung, TW;

Tzu-Chan Weng, Kaohsiung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, KR;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 23/00 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1083 (2013.01); H01L 29/161 (2013.01); H01L 29/24 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/0657 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.

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Kuan, Wan-Chun. (2020). Integrated circuit structure having a crown-shaped semiconductor strip and an isolation region recessed in the substrate (U.S. Patent No. 10861800). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10861800

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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