The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Dec. 12, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Peter Stone, Los Gatos, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Teng-fang Kuo, San Jose, CA (US);

Ping Han Hsieh, San Jose, CA (US);

Zhenwen Ding, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/322 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/0262 (2013.01); H01L 21/02063 (2013.01); H01L 21/02532 (2013.01); H01L 21/02661 (2013.01); H01L 21/3065 (2013.01); H01L 21/3221 (2013.01); H01L 21/6719 (2013.01); H01L 21/68742 (2013.01); H01L 21/02046 (2013.01); H01L 21/31116 (2013.01);
Abstract

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.


Find Patent Forward Citations

Loading…