The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jun. 05, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yihong Chen, San Jose, CA (US);
Yong Wu, Sunnyvale, CA (US);
Chia Cheng Chin, Santa Clara, CA (US);
Xinliang Lu, Fremont, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Ziqing Duan, San Jose, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/763 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/285 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02274 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/28061 (2013.01); H01L 21/28194 (2013.01); H01L 21/28556 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/763 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); G11C 8/14 (2013.01);
Abstract
Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.