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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10854511 B1

PDFFull Text
Date of Patent:
Dec. 01, 2020

Filed:

Jun. 05, 2018

Methods of lowering wordline resistance

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yihong Chen, San Jose, CA (US);

Yong Wu, Sunnyvale, CA (US);

Chia Cheng Chin, Santa Clara, CA (US);

Xinliang Lu, Fremont, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Ziqing Duan, San Jose, CA (US);

Abhijit Basu Mallick, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/763 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/285 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02274 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/28061 (2013.01); H01L 21/28194 (2013.01); H01L 21/28556 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/763 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); G11C 8/14 (2013.01);
Abstract

Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

Find Patent Forward Citations

Chen, Yihong. (2020). Methods of lowering wordline resistance (U.S. Patent No. 10854511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10854511

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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